收藏本站
New Product
Si4712DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.013 at V GS = 10 V
0.0165 at V GS = 4.5 V
I D (A) a
14.6
12.9
Q g (Typ.)
8.3 nC
? Halogen-free According to IEC 61249-2-21
Definition
? SkyFET ? Monolithic TrenchFET ? Power
MOSFET and Schottky Diode
? 100 % R g Tested
? 100 % UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Notebook System Power
SO-8
- Low Side
D
S
S
S
1
2
3
8
7
6
D
D
D
G
4
5
D
G
Schottky Diode
Top V ie w
Orderin g Information: Si4712DY-T1-GE3 (Lead (P b )-free and Halogen-free)
N -Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
14.6
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
11.6
10.3 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
8.2 b, c
50
4.5
2.3 b, c
15
11.25
A
mJ
T C = 25 °C
5
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
3.2
2.5 b, c
W
T A = 70 °C
1.6 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
38
20
50
25
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 65170
S09-1814-Rev. A, 14-Sep-09
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4731-D50-EVB BOARD EVAL SI4730/SI4731-D50
SI4731-D50-GM IC RADIO RECEIVER AM/FM 20-QFN
SI4737-C-EVB BOARD EVAL SI4737 VERSION C
SI4743-C-EVB BOARD EVALUATION FOR SI4743-C
SI4770-A-EVB BOARD EVAL FOR CE AM/FM SI4770
SI4777-A20-GM IC RCVR AM/FM CE HD-RADIO TUNER
SI4804CDY-T1-E3 MOSFET 2N-CH 30V 8A SO8
SI4808DY-T1-GE3 MOSFET N-CH/SCHOTTKY 30V 8SOIC
相关代理商/技术参数
Si4713-A20-GM 功能描述:射频发射器 Broadcast FM Radio RDS/RBDS Pwr Scan RoHS:否 制造商:Micrel 类型:ASK Transmitter 封装 / 箱体:SOT-23-6 工作频率:300 MHz to 450 MHz 封装:Reel
Si4713-A-EVB 功能描述:射频开发工具 SI4713 EVAL BOARD RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V
SI4713-A-GM 制造商:Silicon Laboratories Inc 功能描述:
Si4713-B30-GM 功能描述:射频发射器 FMRadio Trnsmttr w/ RDS/RBDS/RPS 3x3x.55 RoHS:否 制造商:Micrel 类型:ASK Transmitter 封装 / 箱体:SOT-23-6 工作频率:300 MHz to 450 MHz 封装:Reel
SI4713-B30-GMR 功能描述:射频发射器 Si4713 Broadcast FM RDS/RBDS/RPS RoHS:否 制造商:Micrel 类型:ASK Transmitter 封装 / 箱体:SOT-23-6 工作频率:300 MHz to 450 MHz 封装:Reel
SI4713-B-EVB 功能描述:射频开发工具 SI4713 EVAL BOARD REV B RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V
SI4714DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET with Schottky Diode
Si4714DY-T1-GE3 功能描述:MOSFET 30 Volts 13.6 Amps 4.5 Watts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube